|Download Electro-Optical Detector Datasheet (PDF, 136 KB)|
Electro-Optic detector (EOD) is intended for registration of the pulsed terahertz (THz) radiation. It is characterized by availability of integrated optics as well as built-in lock-in amplifier. The detector has the following functions: signal conditioning; automatic signal balance fine tuning on photo-detectors. Facility of mechanical delay circuit control by means of the proprietary software supplied with the EOD is envisaged. Application field of the device includes time-domain spectroscopy (TDS).
|Model of the EOD||EOD-NIR||EOD-MIR|
|EO optical pair crystal – photodiode||ZnTe – Si||CdTe – InGaAs|
|Signal radiation wavelength, nm||600–1100||1100–1700|
|Signal radiation spectral width(Full width at half maximum /FWHM/), nm||11–20|
|Spectral sensitivity, THz||0.1–4|
|Signal radiation impulse duration, fs||<120|
|Signal-carrying beam power, mW||1–20|
|Minimal required power of THz radiation, nW||1|
|Lock-in amplifier modulation frequency, Hz||15–250000|
|Lock-in amplifier gain||100–30000|
|Lock-in amplifier time constant, s||0.003–10|
|Operating temperature, °C||5–45|
|Storage temperature, °C||0–60|
|Air humidity, %||5–85|
|Voltage, V||110 / 220|
|Power consumption, W||18|
|EOD overall dimensions (L×W×H), mm||268.0×82.0×42.5|
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